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| CHR2391 RoHS COMPLIANT 12-16GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2391 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate and air bridges. It is available in chip form. Main Features * * * * * * * Broadband performances : 12.0-16.0GHz 15 dB conversion gain 2dB noise figure 10dBm LO input power Low DC power consumption, 100mA@3.5V Chip size : 2.49 X 2.13 X 0.10 mm dB 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 Typical on wafer measurement: Conversion Gain & Image suppression @ IF=0.9 & 1.5GHz 2 LO frequency -10dBm RF input power (1dB gain comp.) 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 RF Frequency GHz Main Characteristics Tamb. = 25C Parameter Min Typ Max Unit FRF FLO FIF Gc RF frequency range LO frequency range IF frequency range Conversion gain 1/6 12 5.25 0.25 13 +15 16 7.25 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR23915263 - 20 Sep 05 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter Electrical Characteristics for Broadband Operation Tamb = +25C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol FRF FLO FIF Gc NF PLO Img Sup P1dB IP3 CHR2391 Parameter RF frequency range LO frequency range IF frequency range Conversion gain (1) Noise Figure (1) LO Input power Image Suppression Input power at 1dB gain compression Input IP3 Min 12 5.25 0.25 +13 Typ Max 16 7.25 1.5 Unit GHz GHz GHz dB +15 2. +10 15 -10 2.5 2.0:1 2.0:1 100 130 2.5 +13 dB dBm dBc dBm dBm LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2) mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances are obtained for Idm=50mA (Id consumption of the X2+buffer; vgb-0.4V) and Idl=50mA(Id consumption for the lna; Vga-0.4V) Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Vdg Pin Tch Ta Tstg Parameter Maximum drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage ( Vd - Vg) Maximum RF peak input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 4.0 180 -2.0 to +0.4 +5 -5 175 -40 to +85 -55 to +125 Unit V mA V V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : : DSCHR23915263 - 20 Sep 05 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter Typical On-wafer Measurements CHR2391 Bias Conditions : Vdm= Vdl= 3.5 V, Idl= Idm= 50mA( Vga=vgb-0.4V), Vgm= -0.7V, Vgx= -0.6V Conversion gain & Image suppression with a 90 IQ combiner 22 IF= 0,9GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Infradyne Gain I Image Rejection I -10 -12 Image Rejection Q Infradyne Gain Q -14 -16 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 RF Frequency GHz dB dB 22 IF= 1,5GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Infradyne Gain I Image Rejection I -10 -12 Image Rejection Q Infradyne Gain Q -14 -16 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 RF Frequency GHz 3/6 Specifications subject to change without notice Ref. : : DSCHR23915263 - 20 Sep 05 Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter CHR2391 Gain compression versus RF input power 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 IF=0.9GHz Conversion Gain dB IF Output power dBm -4 -2 0 RF Input power dBm 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 4/6 IF=1.5GHz Conversion Gain dB IF Output power dBm -10 -8 -6 -4 -2 0 RF Input power dBm Ref. : : DSCHR23915263 - 20 Sep 05 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter CHR2391 Chip Assembly and Mechanical Data To Vg (lna) DC Gate supply To Vg (mixer) DC Gate supply To VdL(lna) +VdM(x2+buffer) DC Gate supply To Vg(Buffer) DC Gate supply To Vg(multiplier) DC Gate supply Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bonding pad positions Chip thickness : 100m Unit : m Tol : + / - 35m Ref. : : DSCHR23915263 - 20 Sep 05 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter CHR2391 Ordering Information Chip form : CHR2391-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR23915263 - 20 Sep 05 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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